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FDD5680

MOSFET N-Ch PowerTrench

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SeekIC No. : 00156891 Detail

FDD5680: MOSFET N-Ch PowerTrench

FDD5680 Data Sheet

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Part Number:
FDD5680
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Unit Price
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  • Processing time
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 38 A
Resistance Drain-Source RDS (on) : 0.017 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 38 A
Resistance Drain-Source RDS (on) : 0.017 Ohms
Package / Case : TO-252AA


Features:

• 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V.
• Low gate charge (33nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(on).


Application

• DC/DC converter
• Motor drives


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
60
±20
38
8.5
100
60
2.8
1.3
-55 to +150
V
V
A


W


°C
ID
 Maximum Drain Current -Continuous
TA = 25		 (Note 1)
(Note 1a)
Maximum Drain Current -Pulsed
PD
 Maximum Power Dissipation TC = 25
TA = 25
TA = 25		 (Note 1)
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDD5680 N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.




Parameters:

Technical/Catalog InformationFDD5680
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C8.5A
Rds On (Max) @ Id, Vgs21 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds 1835pF @ 30V
Power - Max1.3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs46nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD5680
FDD5680



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