FDD5810_F085

The FDD5810_F085 is N-Channel Logic Level Trench® MOSFET. The applications of it are Motor / Body Load Control, ABS Systems, Powertrain Management, Injection System, DC-DC converters and Off-line UPS, Distributed Power Architecture and VRMs, Primary Switch for 12V and 24V systems.

The features of FDD5810_F085 can be summarized as:(1)RDS(ON) = 22m (Typ.), VGS = 5V, ID = 29A; (2)Qg(5) = 13nC (Typ.), VGS = 5V; (3)Low Miller Charge; (4)Low Qrr ; (5)Body Diode; (6)UIS Capability (Single Pulse / Repetitive Pulse); (7)Qualified to AEC Q101; (8)RoHS Compliant.

The absolute maximum ratings of FDD5810_F085 are:(1)Drain to Source Voltage:60 V; (2)Gate to Source Voltage:±20 V; (3)Drain Current Continuous:VGS=10V..37A,VGS=5V..33A; (4)Drain Current Continuous (TA=25°C, VGS=10V, with RJA=52°C/W):7.4A; (5)Single Pulse Avalanche Energy:45 mJ; (6)Power Dissipation:72 W; (7)Derate above 25°C:0.48 W/°C; (8)Operating and Storage Temperature:-55°C to +175°C.

If you want to know more information such as the electrical characteristics about the FDD5810_F085, please download the datasheet in www.seekic.com or www.chinaicmart.com .