MOSFET 30V N-Ch PowerTrench
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 56 A | ||
| Resistance Drain-Source RDS (on) : | 9.5 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-252AA | Packaging : | Reel |
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±20 56 14 100 60 2.8 1.3 55 to +175 |
V V | |
|
ID |
Continuous Drain Current @TC=25°C @TA=25°C Pulsed |
(Note 3) |
A | |
|
PD |
Power Dissipation @TC=25°C @TA=25°C @TA=25°C |
(Note 3) (Note 1a) (Note 1b) |
W | |
|
TJ, TSTG |
Operating and Storage Temperature Range |
°C | ||
This FDD7030BL N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
| Technical/Catalog Information | FDD7030BL |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 14A, 10V |
| Input Capacitance (Ciss) @ Vds | 1425pF @ 15V |
| Power - Max | 1.3W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 20nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD7030BL FDD7030BL |