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FDD8778

MOSFET 25V N-Channel PowerTrench MOSFET

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SeekIC No. : 00146274 Detail

FDD8778: MOSFET 25V N-Channel PowerTrench MOSFET

FDD8778 Data Sheet

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US $ .23~.34 / Piece | Get Latest Price
Part Number:
FDD8778
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.34
  • $.3
  • $.26
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 11.6 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 35 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 11.6 m Ohms


Features:

·  Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A
·  Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A
·  Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V
·  Low gate resistance
·  RoHS compliant


Application

·  DC-DC for Desktop Computers and Servers
·  VRM for Intermediate Bus Architecture


Specifications

VDS Drain to Source Voltage .............................................25 V
VGS Gate to Source Voltage ...........................................±20 V
ID Drain Current -Continuous (Package Limited) ..............35 A
ID Drain Current-Continuous (Die Limited) .......................40 A
ID Drain Current-Pulsed (Note 1) ...................................145 A
EAS Single Pulse Avalanche Energy (Note 2) ..................24 mJ
PD Power Dissipation ......................................................39 W
TJ, TSTG Operating and Storage Temperature ...-55 to 175 °C


Description

This FDD8778 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.




Parameters:

Technical/Catalog InformationFDD8778
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C35A
Rds On (Max) @ Id, Vgs14 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 845pF @ 13V
Power - Max39W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs18nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD8778
FDD8778
FDD8778TR ND
FDD8778TRND
FDD8778TR



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