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FDFC3N108

MOSFET 20V N-Ch 1.8V Spec PowerTrench

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SeekIC No. : 00163043 Detail

FDFC3N108: MOSFET 20V N-Ch 1.8V Spec PowerTrench

FDFC3N108 Data Sheet

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Part Number:
FDFC3N108
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 3 A
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.07 Ohms


Features:

· 3 A, 20 V RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V
· Low gate charge
· High performance trench technology for extremely low RDS(ON)


Application

· Battery management/Charger Application
· DC/DC Conversion


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
20
±12
3
12
0.96
0.90
0.70
55 to +150
V
V
ID
 Drain Current Continuous
Pulsed

(Note 3)
(Note 1a)
A
PD
 Maximum Power Dissipation
(Note 1)
(Note 1a)
(Note 1b)
W
TJ, TSTG
 Operating and Storage Temperature Range
°C



Description

This FDFC3N108 N-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It is combined with a low forward drop Schottky that is isolated from the MOSFET, providing a compact power solution for battery power management and DC/DC converter applications.




Parameters:

Technical/Catalog InformationFDFC3N108
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs70 mOhm @ 3A, 4.5V
Input Capacitance (Ciss) @ Vds 355pF @ 10V
Power - Max700mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs4.9nC @ 4.5V
Package / CaseSSOT-6
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDFC3N108
FDFC3N108



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