Position: Home  > All Categories> Integrated Circuits (ICs) > FDFC3N108

FDFC3N108

MOSFET 20V N-Ch 1.8V Spec PowerTrench

product image

FDFC3N108 Picture
See larger image
SeekIC No. : 00163043 Detail

FDFC3N108: MOSFET 20V N-Ch 1.8V Spec PowerTrench

FDFC3N108 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FDFC3N108
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 3 A
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.07 Ohms


Features:

· 3 A, 20 V RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V
· Low gate charge
· High performance trench technology for extremely low RDS(ON)


Application

· Battery management/Charger Application
· DC/DC Conversion


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
20
±12
3
12
0.96
0.90
0.70
55 to +150
V
V
ID
 Drain Current Continuous
Pulsed

(Note 3)
(Note 1a)
A
PD
 Maximum Power Dissipation
(Note 1)
(Note 1a)
(Note 1b)
W
TJ, TSTG
 Operating and Storage Temperature Range
°C



Description

This FDFC3N108 N-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It is combined with a low forward drop Schottky that is isolated from the MOSFET, providing a compact power solution for battery power management and DC/DC converter applications.




Parameters:

Technical/Catalog InformationFDFC3N108
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs70 mOhm @ 3A, 4.5V
Input Capacitance (Ciss) @ Vds 355pF @ 10V
Power - Max700mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs4.9nC @ 4.5V
Package / CaseSSOT-6
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDFC3N108
FDFC3N108



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Transformers
TM-09210
BV222-1-00992
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Kits
IT243
UVSC-110-4E1
Tapes, Adhesives
803
AC452-2
View more