MFG:FAIRCHILD Package Cooled:SOP8 D/C:08+
MFG: FAIRCHILD
Package Cooled: SOP8
D/C: 08+
Description: The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with ...
The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
20 ±20 3.3 10 2 1.6 1 0.9 55 to +150 20 1 |
V V A W °C V A | |
|
ID |
Drain Current Continuous Pulsed | (Note 1a) | ||
|
PD |
Power Dissipation for Dual Operation | (Note 1a) (Note 1b) (Note 1c) | ||
| Power Dissipation for Single Operation | ||||
| TJ, TSTG | Operating and Storage Junction Temperature Range | |||
|
VRRM |
Schottky Repetitive Peak Reverse Voltage | |||
|
IO |
Schottky Average Forward Current | (Note 1a) | ||
• 3.3 A, 20 V RDS(ON) = 125 mΩ @ VGS = 10 VRDS(ON) = 200 mΩ @ VGS = 4.5 V
• VF < 0.39 V @ 1 A (TJ = 125°C) VF < 0.47 V @ 1 A VF < 0.58 V @ 2 A
• Schottky and MOSFET incorporated into single power surface mount SO-8 package
• Electrically independent Schottky and MOSFET pinout for design flexibility
FDFS2P102A
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The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.This FDFS2P102 device is designed specifically as a single package solution for DC t...
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