Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Drain-Source Breakdown Voltage
: - 20 V
Maximum Operating Temperature
: + 150 C
Package / Case
: SOIC-8 Narrow
Configuration
: Single Dual Drain
Resistance Drain-Source RDS (on)
: 0.125 Ohms
Continuous Drain Current
: - 3.3 A
Features: • 3.3 A, 20 V RDS(ON) = 125 mΩ @ VGS = 10 VRDS(ON) = 200 mΩ @ VGS = 4.5 V
• VF < 0.39 V @ 1 A (TJ = 125°C) VF < 0.47 V @ 1 A VF < 0.58 V @ 2 A
• Schottky and MOSFET incorporated into single power surface mount SO-8 package
• Electrically independent Schottky and MOSFET pinout for design flexibility
Pinout
Specifications
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage |
20
±20
3.3
10
2
1.6
1
0.9
55 to +150
20
1 |
V
V
A
W
°C
V
A |
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) |
|
PD |
Power Dissipation for Dual Operation |
(Note 1a)
(Note 1b)
(Note 1c) |
| Power Dissipation for Single Operation |
| TJ, TSTG |
Operating and Storage Junction Temperature Range |
|
VRRM |
Schottky Repetitive Peak Reverse Voltage |
|
IO |
Schottky Average Forward Current |
(Note 1a) |
DescriptionThe FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This FDFS2P102A device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Parameters: | Technical/Catalog Information | FDFS2P102A |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3.3A |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 3.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 182pF @ 10V |
| Power - Max | 900mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 3nC @ 5V |
| Package / Case | 8-SOIC |
| FET Feature | Diode (Isolated) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDFS2P102A
FDFS2P102A
FDFS2P102ACT ND
FDFS2P102ACTND
FDFS2P102ACT
|
FDFS2P102A Data Sheet
