MOSFET P-Ch PowerTrench Specified 1.8V
FDG6316P_Q: MOSFET P-Ch PowerTrench Specified 1.8V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 12 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | - 0.7 A | ||
Resistance Drain-Source RDS (on) : | 0.27 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC-70-6 | Packaging : | Reel |