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FDG6316P_Q

MOSFET P-Ch PowerTrench Specified 1.8V

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SeekIC No. : 00165881 Detail

FDG6316P_Q: MOSFET P-Ch PowerTrench Specified 1.8V

FDG6316P_Q Data Sheet

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Part Number:
FDG6316P_Q
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 12 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : - 0.7 A
Resistance Drain-Source RDS (on) : 0.27 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : - 12 V
Package / Case : SC-70-6
Resistance Drain-Source RDS (on) : 0.27 Ohms
Continuous Drain Current : - 0.7 A


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