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FDH038AN08A1

MOSFET N-Ch PowerTrench

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SeekIC No. : 00148498 Detail

FDH038AN08A1: MOSFET N-Ch PowerTrench

FDH038AN08A1 Data Sheet

floor Price/Ceiling Price

US $ 2.64~3.68 / Piece | Get Latest Price
Part Number:
FDH038AN08A1
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $3.68
  • $3.31
  • $2.92
  • $2.64
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0035 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 80 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.0035 Ohms


Features:

• rDS(ON) = 3.5m (Typ.), VGS = 10V, ID = 80A
• Qg(tot) = 125nC (Typ.), VGS = 10V
• Internal Gate Resistor, Rg = 20 (Typ.)
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems


Specifications

Symbol
Parameter
Ratings
Units
VDSS
 Drain to Source Voltage
75
V
VGS
 Gate to Source Voltage
±20
V
ID
 Drain Current
Continuous (TC < 158oC, VGS = 10V)
80
A
Continuous (TA = 25oC, VGS = 10V, with RJA = 30oC/W)
22
A
Pulsed
Figure 4
A
EAS
 Single Pulse Avalanche Energy (Note 1)
1.17
J
PD
 Power dissipation
450
W
Derate above 25oC
3.0
W/oC
TJ, TSTG
 Operating and Storage Temperature
-55 to 175
oC



Parameters:

Technical/Catalog InformationFDH038AN08A1
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs3.8 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 8665pF @ 25V
Power - Max450W
PackagingTube
Gate Charge (Qg) @ Vgs160nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDH038AN08A1
FDH038AN08A1



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