FDH15N50

MOSFET 15a 500V N-Ch UltraFET

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SeekIC No. : 00160664 Detail

FDH15N50: MOSFET 15a 500V N-Ch UltraFET

floor Price/Ceiling Price

Part Number:
FDH15N50
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.38 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 15 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.38 Ohms


Features:

* Low Gate Charge Qg results in Simple Drive Requirement
* Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
* Reduced rDS(ON)
* Reduced Miller Capacitance and Low Input Capacitance
* Improved Switching Speed with Low EMI
* 175°C Rated Junction Temperature



Application

Switch Mode Power Supplies(SMPS), such as
* PFC Boost
* Two-Switch Forward Converter
* Single Switch Forward Converter
* Flyback Converter
* Buck Converter
* High Speed Switching



Specifications

Symbol Parameter Ratings Units
VDSS
Drain to Source Voltage
500
V
VGS
Gate to Source Voltage ±30 V
ID
Drain Current
Continuous (TC = 25, VGS = 10V)
Continuous (TC = 100, VGS = 10V)
Pulsed1
15 A
11
A
60  
PD
Power dissipation
Derate above 25
300
2
W
W/
TJ , TSTG
Operating and Storage Temperature -55 to 175
  Soldering Temperature for 10 seconds 300 (1.6mm from case)



Parameters:

Technical/Catalog InformationFDH15N50
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs380 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 1850pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs41nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDH15N50
FDH15N50



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