FDH45N50F

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.12 Ohms


Specifications

      

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDH45N50F_F133	Full Production	RoHS Compliant	$6.75	TO-247	3	RAIL		Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: FDH Line 3: 45N50F

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDH45N50F is available. Click here for more information .

Description

These FDH45N50F N-Channel enhancement mode power field effect transistorsare produced using Fairchild?s proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimizeon-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche andcommutation mode. These devices FDH45N50F are well suited for high efficientswitched mode power supplies and active power factorcorrection.