FDMA1027P

MOSFET MLP 2X2 DUAL PCH POWER TRENCH

product image

FDMA1027P Picture
SeekIC No. : 00149704 Detail

FDMA1027P: MOSFET MLP 2X2 DUAL PCH POWER TRENCH

floor Price/Ceiling Price

US $ .34~.52 / Piece | Get Latest Price
Part Number:
FDMA1027P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.52
  • $.46
  • $.4
  • $.34
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 2.2 A
Resistance Drain-Source RDS (on) : 120 mOhms at 4.5 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : MicroFET Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 2.2 A
Package / Case : MicroFET
Resistance Drain-Source RDS (on) : 120 mOhms at 4.5 V


Features:

•  3.0 A, 20V.  RDS(ON)  = 120 mΩ @ VGS = 4.5V
                             RDS(ON)  = 160 mΩ @ VGS = 2.5V
                             RDS(ON)  = 240 mΩ @ VGS = 1.8V
•  Low profile 0.8 mm maximum in the new package
    MicroFET 2x2 mm



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous        (Note 1a)
             Pulsed
2.2
A
6
PD
Power Dissipation (Steady State)   (Note 1a)
                                     (Note 1b)
1.4
W
0.7
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C



Description

This FDMA1027P device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses.  When connected in the typical common source configuration, bi-directional current flow is possible.

The FDMA1027P MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. 
 




Parameters:

Technical/Catalog InformationFDMA1027P
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.2A
Rds On (Max) @ Id, Vgs120 mOhm @ 3A, 4.5V
Input Capacitance (Ciss) @ Vds 435pF @ 10V
Power - Max1.4W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs6nC @ 4.5V
Package / CaseMicrofet 2x2
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDMA1027P
FDMA1027P
FDMA1027PDKR ND
FDMA1027PDKRND
FDMA1027PDKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cable Assemblies
Integrated Circuits (ICs)
Optoelectronics
Line Protection, Backups
Fans, Thermal Management
Soldering, Desoldering, Rework Products
View more