FDMA410NZ

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 0.023 Ohms
Continuous Drain Current : 9.5 A
Configuration : Single Quad Drain
Package / Case : MicroFET


Specifications

      

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDMA410NZ	Full Production	Green	$0.372	MicroFET	6	TAPE REEL		Line 1: &E&Y (Binary Calendar Year Coding) Line 2: &O410&C Line 3: &.&O&V

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDMA410NZ is available. Click here for more information .

Description

This FDMA410NZ Single N-Channel MOSFET has been designed using Fairchild Semiconductor?s advanced Power Trench process to optimize the r_DS(ON) @ V_GS = 1.5 V on special MicroFET leadframe.

Parameters:

Technical/Catalog Information	FDMA410NZ
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	9.5A
Rds On (Max) @ Id, Vgs	23 mOhm @ 9.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1080pF @ 10V
Power - Max	900mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Package / Case	MicroFET-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDMA410NZ FDMA410NZ FDMA410NZCT ND FDMA410NZCTND FDMA410NZCT