FDP047AN08A0, US $ 1.54-2.08 , Fairchild Semiconductor, FDP047AN08A0 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00151369 Detail

FDP047AN08A0: MOSFET 75V N-Ch PowerTrench

FDP047AN08A0 Data Sheet

US $ 1.54~2.08 / Piece | Get Latest Price

Part Number:: FDP047AN08A0
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	75 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	80 A
Resistance Drain-Source RDS (on) :	0.004 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.004 Ohms

Features:

* r _DS(ON) = 4.0mW (Typ.), V_GS= 10V, ID = 80A
* Q_g (tot) = 92nC (Typ.), V_GS = 10V
* Low Miller Charge
* Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101

Application

* 42V Automotive Load Control
* Starter / Alternator Systems
* Electronic Power Steering Systems
* Electronic Valve Train Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V systems

Specifications

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	75	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current	80	A
	Continuous (T_C < 144, V_GS= 10V)	80	A
	Continuous (T_C = 25, V_GS = 10V, with R_JA = 62 /W)	15	A
	Pulsed	Figure 4	A
E_AS	Single Pulse Avalanche Energy (Note 1)	475	mJ
P_D	Power dissipation	310	W
P_D	Derate above 25	2.0	W/
T_J, T_STG	Operating and Storage Temperature	-55to 175

Parameters:

Technical/Catalog Information	FDP047AN08A0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	4.7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	6600pF @ 25V
Power - Max	310W
Packaging	Tube
Gate Charge (Qg) @ Vgs	138nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP047AN08A0 FDP047AN08A0

FDP047AN08A0

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