FDP120AN15A0

MOSFET 150V 14a 0.120 Ohms/VGS=10V

product image

FDP120AN15A0 Picture
SeekIC No. : 00160730 Detail

FDP120AN15A0: MOSFET 150V 14a 0.120 Ohms/VGS=10V

floor Price/Ceiling Price

Part Number:
FDP120AN15A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.101 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.101 Ohms


Features:

• rDS(ON) = 101mΩ (Typ.), VGS = 10V, ID = 4A
• Qg(tot) = 11.2nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101



Application

• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems



Specifications

Symbol
Parameter
Ratings
Units
VDSS Drain to Source Voltage
150
V
VGS Gate to Source Voltage
±20
V
ID Drain Current
Continuous (TC=25, VGS = 10V)
14
A
Continuous (TC =100, VGS =10V)
9.7
A
Continuous (Tamb = 25, VGS = 10V, RJA = 52/W)
2.8
A
Pulsed
Figure 4
A
EAS Single Pulse Avalanche Energy (Note 1)
122
mJ
PD Power dissipation
65
W
Derate above 25
0.43
W/
TJ, TSTG Operating and Storage Temperature
-55 to 175



Parameters:

Technical/Catalog InformationFDP120AN15A0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs120 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 770pF @ 25V
Power - Max65W
PackagingTube
Gate Charge (Qg) @ Vgs14.5nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP120AN15A0
FDP120AN15A0



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Industrial Controls, Meters
Inductors, Coils, Chokes
Cables, Wires - Management
Batteries, Chargers, Holders
View more