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FDP14AN06LA0

MOSFET 60V N-Ch PowerTrench MOSFET

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SeekIC No. : 00161563 Detail

FDP14AN06LA0: MOSFET 60V N-Ch PowerTrench MOSFET

FDP14AN06LA0 Data Sheet

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Part Number:
FDP14AN06LA0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 61 A
Resistance Drain-Source RDS (on) : 0.0102 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 61 A
Resistance Drain-Source RDS (on) : 0.0102 Ohms


Features:

*rDS(ON)  = 12.8m  (Typ.), VGS = 5V, ID = 60A 
*Qg (tot) = 24nC (Typ.), VGS = 5V
* Low Miller Charge
*Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 83557


Application

* Motor / Body Load Control
* ABS Systems
* Powertrain Management
* Injection Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 12V and 24V systems


Specifications

Symbol Parameter Ratings Units
VDSS

 Drain to Source Voltage 60 V
VGS
Gate to Source Voltage
±20
 V
ID
 Drain Current
Continuous (TC = 25, VGS = 10V) 
 67 A
Continuous (TC = 25, VGS = 5V)
 60 A
Continuous (TA = 25, VGS = 5V, RJA = 43/W) 10 A
Pulsed Figure 4 A
EAS
 Single Pulse Avalanche Energy (Note 1) 46 mJ
PD
 Power dissipation 125 W

Derate above 25
0.83		 W/
TJ , TSTG
 		 Operating and Storage Temperature -55 to 175  



Parameters:

Technical/Catalog InformationFDP14AN06LA0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C67A
Rds On (Max) @ Id, Vgs11.6 mOhm @ 67A, 10V
Input Capacitance (Ciss) @ Vds 2900pF @ 25V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs31nC @ 5V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP14AN06LA0
FDP14AN06LA0



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