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FDP3632_Q

MOSFET 100V 80a .9 Ohms/VGS=1V

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SeekIC No. : 00164966 Detail

FDP3632_Q: MOSFET 100V 80a .9 Ohms/VGS=1V

FDP3632_Q Data Sheet

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Part Number:
FDP3632_Q
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 7.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 7.5 m Ohms


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