MOSFET 100V 32a .36Ohm/VGS=1V
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 32 A | ||
| Resistance Drain-Source RDS (on) : | 36 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V |
|
VGSS |
Gate-Source Voltage |
±20 |
V |
|
ID |
Drain Current
Continuous (TC = 25, VGS = 10V) |
32 |
A |
|
Continuous (TC = 100, VGS = 10V) |
23 |
A | |
|
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W) |
6 |
A | |
|
Pulsed |
Figure 4 |
A | |
|
EAS |
Single Pulse Avalanche Energy (Note 1) |
55 |
mJ |
|
PD |
Power dissipation |
95 |
W |
|
Derate above 25 |
0.63 |
W/°C | |
|
TJ, Tstg |
Operating and Storage Temperature |
-55 to 175 |
°C |
| Technical/Catalog Information | FDP3682 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 32A |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 32A, 10V |
| Input Capacitance (Ciss) @ Vds | 1250pF @ 25V |
| Power - Max | 95W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 28nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDP3682 FDP3682 |