FDP39N20

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 39 A
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.066 Ohms


Features:

* 39A, 300V, R _DS(on)  = 0.066W @V_GS  = 10 V
* Low gate charge ( typical 38 nC)
* Low C_rss  ( typical  57 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


Specifications

 

Symbol	Parameter	FDP39N20	Unit
VDSS	Drain-Source Voltage	200	V
ID	Drain Current - Continuous (TC  = 25)                      - Continuous (TC  = 100)	39 23.4	A A
IDM	Drain Current Pulsed                (Note 1)	156	A
VGSS	Gate-Source voltage	±30	V
EAS	Single Pulsed Avalanche Energy  (Note 2)	860	mJ
IAR	I Avalanche Current                     (Note 1)	39	A
EAR	Repetitive Avalanche Energy       (Note 1)	25.1	mJ
dv/dt	Peak Diode Recovery dv/dt          (Note 3)	4.5	V/ns
PD	Power Dissipation (TC  = 25)                   - Derate above 25	251 2.0	W W/
TJ,TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum Lead Temperature for Soldering Purpose,1/8" from Case for 5 Seconds	300	°C

Description

These FDP39N20 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDP39N20 are well suited for high efficient switched mode power supplies and active power factor correction.


Parameters:

Technical/Catalog Information	FDP39N20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	39A
Rds On (Max) @ Id, Vgs	66 mOhm @ 19.5A, 10V
Input Capacitance (Ciss) @ Vds	2130pF @ 25V
Power - Max	251W
Packaging	Tube
Gate Charge (Qg) @ Vgs	49nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP39N20 FDP39N20