FDP5645

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.0095 Ohms


Features:

·  80 A, 60 V.   R _DS(ON)= 0.0095 W @ V_GS = 10 V
                         R _DS(ON)= 0.011   W @ V_GS =  6 V
·  Critical DC electrical parameters specified at elevated temperature.
·  Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·  High performance trench technology for extremely low R _DS(ON)
·  175°C maximum junction temperature rating.


Specifications

Symbol	Parameter	FDP5645	FDB5645	Units
VDSS	Drain-Source Voltage	60		V
VGSS	Gate-Source Voltage	± 20		V
ID	Drain Current - Continuous                            - Pulsed	80		A
		300
PD	Total Power Dissipation @ TC =25                                 Derate above 25	125		W
		0.83		W/
TJ, Tstg	Operating and Storage Temperature Range	-65 to 175
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	+275

Description

This FDP5645 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These FDP5645 MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Parameters:

Technical/Catalog Information	FDP5645
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	9.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	4468pF @ 30V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	107nC @ 10V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP5645 FDP5645