FDP6030BL

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.015 Ohms


Features:

* 40 A, 30 V. R_DS(ON)  = 0.018 @ V_GS  = 10 V
                     R_DS(ON)  = 0.024 @ V_GS = 4.5 V.
 *  Critical DC electrical parameters specified at elevated temperature.
*  Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
*  High performance trench technology for extremely  low R_DS(ON).
*  175 maximum junction temperature rating.


Specifications

Symbol	Parameter	FDP6030BL	FDB6030BL	Units
VDSS	Drain-Source Voltage	30		V
VGSS	Gate-Source Voltage	±20		V
ID	Maximum Drain Current - Continuous (Note 1) - Pulsed	40		A
		120
PD	Total Power Dissipation @ TC = 25	60		W
	Derate above 25	0.36		W/
TJ, TSTG	Operating and Storage Junction Temperature Range	-65 to +175

Description

  This FDP6030BL N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

  These MOSFETs FDP6030BL feature faster switching and lower gate charge than other MOSFETs with comparable R_DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.

Parameters:

Technical/Catalog Information	FDP6030BL
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	18 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	1160pF @ 15V
Power - Max	60W
Packaging	Tube
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP6030BL FDP6030BL