Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 30 V
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Continuous Drain Current
: 80 A
Resistance Drain-Source RDS (on)
: 0.0035 Ohms
Features: * 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 V
RDS(ON) = 0.0045 @ VGS = 4.5 V
* Critical DC electrical parameters specified at elevated temperature
* Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
* High performance trench technology for extremely low RDS(ON)
* 175°C maximum junction temperature rating Specifications
| Symbol |
Parameter |
Ratings |
Units |
| VDSS |
Drain-Source Voltage
|
30 |
V |
VGSS |
Gate-Source Voltage |
±20 |
V |
| ID |
Drain Current Continuous (Note 1)
Pulsed (Note 1) |
80 |
A |
| 300 |
| PD |
Total Power Dissipation @# TC = 25
Derate above 25 |
187 |
W |
| 1.25 |
W |
| TJ, TSTG |
Operating and Storage Junction Temperature Range |
-65 to +175 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
275 |
|
Description This FDP8030L N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
These FDP8030L MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Parameters: | Technical/Catalog Information | FDP8030L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 10500pF @ 15V |
| Power - Max | 187W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 170nC @ 5V |
| Package / Case | TO-220 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDP8030L
FDP8030L
|
FDP8030L Data Sheet
