FDPF10N50FT

MOSFET UniFET 500V 10A

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SeekIC No. : 00146268 Detail

FDPF10N50FT: MOSFET UniFET 500V 10A

floor Price/Ceiling Price

US $ .61~.88 / Piece | Get Latest Price
Part Number:
FDPF10N50FT
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.88
  • $.77
  • $.71
  • $.61
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.85 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.85 Ohms


Specifications

      

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
FDPF10N50FTFull ProductionRoHS Compliant$1.10TO-220F3RAIL N/ALine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: FDPF Line 3: 10N50FT
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDPF10N50FT is available. Click here for more information .



Description

These FDPF10N50FT N-Channel enhancement mode power field effect transistorsare produced using Fairchild?s proprietary, planar stripe,DMOS technology.

This advance technology has been especially tailored to minimizeon-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche andcommutation mode. These devices FDPF10N50FT are well suited for high efficientswitching mode power supplies and active power factorcorrection.




Parameters:

Technical/Catalog InformationFDPF10N50FT
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs850 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds 1170pF @ 25V
Power - Max42W
PackagingTube
Gate Charge (Qg) @ Vgs24nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDPF10N50FT
FDPF10N50FT



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