FDS3170N7

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Continuous Drain Current : 6.7 A
Resistance Drain-Source RDS (on) : 0.026 Ohms
Configuration : Single Seven Source


Features:

• 6.7 A, 100 V. R_DS(ON) = 26 m @ V_GS = 10 V
                        R_DS(ON) = 28 m @ V_GS = 6.0 V
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability
• Fast switching, low gate charge
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size


Application

• Synchronous rectifier
• DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	100	V
VGSS	Gate-Source Voltage	± 20
ID	Drain Current Continuous (Note 1a)                   Pulsed	6.7	A
		60
PD	Power Dissipation for Single Operation (Note 1a)	3.0	W
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS3170N7 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. FDS3170N7 has been optimized for "low side" synchronous rectifier operation, providing an extremely low R_DS(ON) in a small package.

Parameters:

Technical/Catalog Information	FDS3170N7
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	6.7A
Rds On (Max) @ Id, Vgs	26 mOhm @ 6.7A, 10V
Input Capacitance (Ciss) @ Vds	2714pF @ 50V
Power - Max	3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	77nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS3170N7 FDS3170N7 FDS3170N7TR ND FDS3170N7TRND FDS3170N7TR