FDS4080N7

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.01 Ohms
Configuration : Single Seven Source


Features:

• 13 A, 40 V RDS(ON) = 10 m @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching (Qg = 30 nC )
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size


Application

• Synchronous rectifier
• DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	40	V
VGSS	Gate-Source Voltage	+20	V
ID	Draint Current - Continuous (Note 1)	13	A
	- Pulsed	60
PD	Power Dissipation for Single Operation (Note 1a)	3.9	W
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS4080N7 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Parameters:

Technical/Catalog Information	FDS4080N7
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	10 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	1750pF @ 20V
Power - Max	3.9W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4080N7 FDS4080N7 FDS4080N7DKR ND FDS4080N7DKRND FDS4080N7DKR