FDS4465

Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 13.5 A
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.0085 Ohms


Features:

•  13.5 A, 20 V.  R_DS(ON) = 8.5 mΩ @ V_GS = 4.5 V
                                R_DS(ON) = 10.5 mΩ @ V_GS = 2.5 V 
                                R_DS(ON) = 14 mΩ @ V_GS = 1.8 V
• Fast switching speed
•  High performance trench technology for extremely  low _RDS(ON) 
•  High current and power handling capability


Application

• Power management
• Load switch
•  Battery protection 


Pinout




Specifications

Symbol	Parameter	FDS8433A	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	13.5	A
		50
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.5
		1.2
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Parameters:

Technical/Catalog Information	FDS4465
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	13.5A
Rds On (Max) @ Id, Vgs	8.5 mOhm @ 13.5A, 4.5V
Input Capacitance (Ciss) @ Vds	8237pF @ 10V
Power - Max	1.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	120nC @ 4.5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4465 FDS4465 FDS4465TR ND FDS4465TRND FDS4465TR