FDS4559

Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.055 Ohms
Drain-Source Breakdown Voltage : +/- 60 V
Continuous Drain Current : 4.5 A, - 3.5 A


Features:

• Q1: N-Channel
4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V
                  RDS(on) = 75 m @ VGS = 4.5V
• Q2: P-Channel
3.5 A, 60 V RDS(on) = 105 m @ VGS = 10V
                        RDS(on) = 135 m @ VGS = 4.5V


Application

• DC/DC converter
• Power management
• LCD backlight inverter


Pinout




Specifications

Symbol	Parameter	Q1	Q2	Units
VDSS	Drain-Source Voltage	60	-60	V
VGSS	Gate-Source Voltage	±20	±20	V
ID	Drain Current - Continuous (Note 1a)	4.5	3.5	A
	- Pulsed	20	-20
PD	Power Dissipation for Dual Operation	2		W
	Power Dissipation for Single Operation (Note 1a)	1.6
	(Note 1b)	1.2
	(Note 1c)	1
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +175		°C

Description

This complementary MOSFET device FDS4559 is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Parameters:

Technical/Catalog Information	FDS4559
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	4.5A, 3.5A
Rds On (Max) @ Id, Vgs	55 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	650pF @ 25V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	18nC @ 10V
Package / Case	SO-8
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4559 FDS4559 FDS4559DKR ND FDS4559DKRND FDS4559DKR