MOSFET 40V N-Ch PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 13.2 A | ||
Resistance Drain-Source RDS (on) : | 0.0075 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol | Parameter |
Ratings |
Units |
VDSS | Drain-Source Voltage |
40 |
V |
VGSS | Gate-Source Voltage |
± 20 | |
ID |
Drain Current Continuous (Note 1a) Pulsed |
13.2 |
A |
45 | |||
PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 |
W |
1.4 | |||
1.2 | |||
TJ, TSTG | Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
Technical/Catalog Information | FDS4770 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 13.2A |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 13.2A, 10V |
Input Capacitance (Ciss) @ Vds | 2819pF @ 20V |
Power - Max | 1.2W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 67nC @ 10V |
Package / Case | 8-SOIC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS4770 FDS4770 |