FDS4780

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.008 Ohms
Continuous Drain Current : 10.8 A


Features:

• 10.8 A, 40 V. R_DS(ON) = 10.5 m @ V_GS = 10 V
• Low gate charge (30 nC)
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability


Application

• DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	40	V
VGSS	Gate-Source Voltage	± 20
ID	Drain Current Continuous (Note 1a)            Pulsed	10.8	A
		45
PD	Power Dissipation for Single Operation (Note 1a)                                      (Note 1b)                                      (Note 1c)	2.5	W
		1.4
		1.2
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS4780 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.

Parameters:

Technical/Catalog Information	FDS4780
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	10.8A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 10.8A, 10V
Input Capacitance (Ciss) @ Vds	1686pF @ 20V
Power - Max	1.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4780 FDS4780