FDS4885C

MOSFET S08 DUAL NCH & PCH POWER TRENCH MOSFET

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SeekIC No. : 00151760 Detail

FDS4885C: MOSFET S08 DUAL NCH & PCH POWER TRENCH MOSFET

floor Price/Ceiling Price

US $ .46~.82 / Piece | Get Latest Price
Part Number:
FDS4885C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

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  • 100~250
  • Unit Price
  • $.82
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  • Processing time
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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : +/- 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7.5 A, - 6 A
Resistance Drain-Source RDS (on) : 0.017 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.017 Ohms
Drain-Source Breakdown Voltage : +/- 40 V
Continuous Drain Current : 7.5 A, - 6 A


Features:

Q1: N-Channel
7.5A, 40V RDS(on) = 22m @ VGS = 10V
                RDS(on) = 35m @ VGS = 7V
Q2: P-Channel
6A, 40V RDS(on) = 31m @ VGS = 10V
                  RDS(on) = 42m@ VGS = 4.5V
Fast switching speed
High power and handling capability in a widely used surface mount package



Application

· Synchronous rectifier
· Backlight inverter stage



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Q1
Q2
Units
VDSS Drain-Source Voltage
40
40 
V
VGSS Gate-Source Voltage
±20
±20
ID
Drain Current
Continuous (Note 1a)
Pulsed
7.5
-6
A
20
-20
PD

Power Dissipation for Dual Operation

2
W
Power Dissipation for Single Operation

(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

These FDS4885C dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices FDS4885C are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationFDS4885C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C7.5A, 6A
Rds On (Max) @ Id, Vgs22 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 900pF @ 20V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs21nC @ 10V
Package / CaseSO-8
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS4885C
FDS4885C



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