FDS4895C

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : +/- 40 V
Resistance Drain-Source RDS (on) : 0.032 Ohms
Continuous Drain Current : 5.5 A, - 4.4 A


Features:

Q1: N-Channel
   5.5A, 40V R_DS(on) = 39m @ V_GS = 10V
                   R_DS(on) = 57m @ V_GS = 7V
Q2: P-Channel
   4.4A, 40V R_DS(on) = 46m @ V_GS = 10V
                        R_DS(on) = 63m @ V_GS = 4.5V
High power and handling capability in a widely used surface mount package


Application

Motor Control
DC/DC conversion


Pinout




Specifications

Symbol	Parameter		Ratings		Units
			Q1	Q2
VDSS	Drain-Source Voltage		40	40	V
VGSS	Gate-Source Voltage		±20	±20
ID	Drain Current	Continuous (Note 1a) Pulsed	5.5	-4.4	A
			20	-20
PD	Power Dissipation for Dual Operation		2		W
	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)	1.6
			1
			0.9
TJ, TSTG	Operating and Storage Junction Temperature Range		55 to +150		°C

Description

These FDS4895C dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Parameters:

Technical/Catalog Information	FDS4895C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	5.5A, 4.4A
Rds On (Max) @ Id, Vgs	39 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	410pF @ 20V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	SO-8
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4895C FDS4895C