FDS4935A

Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 30 V
Configuration : Dual Dual Drain
Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 0.023 Ohms
Package / Case : SOIC-8 Narrow


Features:

• 7 A, 30 V R_DS(ON) = 23 m @ V_GS = 10 V
                      R_DS(ON) = 35 m @ V_GS = 4.5 V
• Low gate charge (15nC typical)
• Fast switching speed
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability


Application

• Power management
• Load switch
• Battery protection


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS	Drain-Source Voltage		-30	V
VGSS	Gate-Source Voltage		±20
ID	Drain Current	Continuous (Note 1a) Pulsed	-7	A
			-30
PD	Power Dissipation for Dual Operation		2	W
	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)	1.6
			1
			0.9
TJ, TSTG	Operating and Storage Junction Temperature Range		55 to +150	°C

Description

This FDS4935A P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 20V).

Parameters:

Technical/Catalog Information	FDS4935A
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	23 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1233pF @ 15V
Power - Max	900mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	21nC @ 5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4935A FDS4935A FDS4935ACT ND FDS4935ACTND FDS4935ACT