MOSFET 60V N-Ch PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 10.6 A | ||
Resistance Drain-Source RDS (on) : | 0.012 Ohms | Configuration : | Single Seven Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
60 |
V |
VGSS |
Gate-Source Voltage |
+20 |
V |
ID |
Draint Current - Continuous (Note 1) |
10.6 |
A |
- Pulsed |
50 | ||
PD |
Power Dissipation for Single Operation (Note 1a) |
3.0 |
W |
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +175 |
°C |
This FDS5170N7 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Technical/Catalog Information | FDS5170N7 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 10.6A |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 10.6A, 10V |
Input Capacitance (Ciss) @ Vds | 2889pF @ 30V |
Power - Max | 3W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 71nC @ 10V |
Package / Case | 8-SOIC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS5170N7 FDS5170N7 FDS5170N7TR ND FDS5170N7TRND FDS5170N7TR |