FDS6294

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.0094 Ohms


Features:

· 13 A, 30 V. R_DS(ON) = 11.3 mW @ V_GS = 10 V
                      R_DS(ON) = 14.4 mW @ V_GS = 4.5 V
· Low gate charge (10 nC typical)
· High performance trench technology for extremely low R_DS(ON)
· High power and current handling capability.


Application

· DC/DC converter
· Power management
· Load switch


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 1a)                       Pulsed	13	A
		50
PD	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)	3.0	W
		1.2
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDS6294 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.


Parameters:

Technical/Catalog Information	FDS6294
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	11.3 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	1205pF @ 15V
Power - Max	1.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	14nC @ 5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6294 FDS6294 FDS6294TR ND FDS6294TRND FDS6294TR