FDS6299S

MOSFET 30V N-Ch PowerT SyncFET

product image

FDS6299S Picture
SeekIC No. : 00151600 Detail

FDS6299S: MOSFET 30V N-Ch PowerT SyncFET

floor Price/Ceiling Price

US $ .84~1.81 / Piece | Get Latest Price
Part Number:
FDS6299S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.81
  • $1.36
  • $1.06
  • $.84
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.0039 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 21 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.0039 Ohms


Features:

• 21 A, 30 V. RDS(ON) = 3.9 mΩ @ VGS = 10 V
                     RDS(ON) = 5.1 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability
• 100% RG (Gate Resistance) tested
• Termination is Lead-free and RoHS Compliant



Application

• Synchronous Rectifier for DC/DC Converters
• Notebook Vcore low side switch
• Point of load low side switch



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS


Drain-Source Voltage

30

V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a)
Pulsed
21
A
105

PD
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
2.5
W
1.2
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C



Description

The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6299S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode.


Parameters:

Technical/Catalog InformationFDS6299S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs3.9 mOhm @ 21A, 10V
Input Capacitance (Ciss) @ Vds 3880pF @ 15V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs81nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6299S
FDS6299S



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Semiconductor Modules
Inductors, Coils, Chokes
Soldering, Desoldering, Rework Products
Prototyping Products
DE1
Test Equipment
Tapes, Adhesives
803
View more