FDS6375

Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.024 Ohms


Features:

• -8.0 A, -20 V. RDS(on)= 0.024 Ω @ VGS = -4.5 V
                        RDS(on)= 0.032 Ω @ VGS = -2.5 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely  low RDS(ON)
• High power and current handling capability.


Application

• DC/DC converter
• Load switch
• Battery Protection


Pinout




Specifications

Symbol	Parameter	FDS8433A	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	8.0	A
		-50
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDS6375 P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices FDS6375 are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDS6375
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	24 mOhm @ 8A, 4.5V
Input Capacitance (Ciss) @ Vds	2694pF @ 10V
Power - Max	1W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	36nC @ 4.5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6375 FDS6375 FDS6375CT ND FDS6375CTND FDS6375CT