FDS6570A

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 15 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.0075 Ohms


Features:

• 15 A, 20 V. RDS(on)= 0.0075 Ω @ VGS = 4.5 V
                     RDS(on)= 0.010 Ω @ VGS = 2.5 V.
• Low gate charge (47nC typical).
• Fast switching speed.
•  High performance trench technology for extremely low RDS(ON)
• High power and current handling capability.


Application

• DC/DC converter
• Load switch
• Battery protection


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	15	A
		50
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDS6570A N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices FDS6570A are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDS6570A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 15A, 4.5V
Input Capacitance (Ciss) @ Vds	4700pF @ 10V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	66nC @ 5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6570A FDS6570A FDS6570ATR ND FDS6570ATRND FDS6570ATR