FDS6572A

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 16 A
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.006 Ohms


Features:

· 16 A, 20 V.  R_DS(ON) = 6 mW @  V_GS = 4.5 V
                       R_DS(ON) = 8 mW @  V_GS = 2.5 V
· Low gate charge (57 nC)
· High performance trench technology for extremely low R_DS(ON)
· High power and current handling capability


Application

· DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a)                        Pulsed	16	A
		80
PD	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)                                                               (Note 1c)	2.5	W
		1.2
		1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDS6572A N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.


Parameters:

Technical/Catalog Information	FDS6572A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	6 mOhm @ 16A, 4.5V
Input Capacitance (Ciss) @ Vds	5914pF @ 10V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	80nC @ 4.5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6572A FDS6572A