FDS6575

Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 10 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.013 Ohms


Features:

-10 A, -20 V. R_DS(ON) = 0.013 W @ VGS = -4.5 V,           
                    R_DS(ON) = 0.017 W @ VGS = -2.5 V.
Low gate charge (50nC typical).
High performance trench technology for extremely low R_DS(ON)
High power and current handling capability.


Pinout




Specifications

Symbol	Parameter	FDS8433A	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-10	A
		-50
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDS6575 P-Channel   Logic   Level  MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDS6575 are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Parameters:

Technical/Catalog Information	FDS6575
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	13 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds	4951pF @ 10V
Power - Max	1.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	74nC @ 4.5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6575 FDS6575 FDS6575TR ND FDS6575TRND FDS6575TR