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MFG:FAIRC  Package Cooled:SOP-8  D/C:09+  

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Part Number: FDS6576

 

MFG: FAIRC

Package Cooled: SOP-8

D/C: 09+

Description: This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductors advance Powe...


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FDS6576 General Description


This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductors advance PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).

FDS6576 Maximum Ratings

Symbol                               Parameter Ratings Units
VDSS
Drain-Source Voltage -00 V
VGSS
Gate-Source Voltage ±12 V
ID
Drain Current - Continuou (Note 1a)
                      - Pulse
-11 A
      -50
PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
2.5 W
       1.2
       1
TJ ,TSTG
 
Operating and Storage Junction Temperature Range -55 to +150

FDS6576 Features

-11 A, -20 V. RDS(ON)  = 0.014 @ VGS  = -4.5 V
 
                    RDS(ON)   = 0.020 @ VGS  = -2.5 V
Extended VGSS   range (±12V) for battery applications.
Low gate charge (44nC typical).
Fast switching speed. 
High performance trench technology for extremely low RDS(ON) .
High power and current handling capability.

 

FDS6576 Typical Application

Load switch
Battery protection
Power management

FDS6576 Connection Diagram

FDS6576  Connection Diagram

FDS6576 datasheet

FDS6576
PDF/DataSheet Download

  • Datasheet: FDS6576
  • File Size: 622116 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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