FDS6576

MOSFET SO-8 P-CH -20V

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SeekIC No. : 00148479 Detail

FDS6576: MOSFET SO-8 P-CH -20V

floor Price/Ceiling Price

US $ .45~.72 / Piece | Get Latest Price
Part Number:
FDS6576
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $.72
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  • Processing time
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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.014 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.014 Ohms


Features:

-11 A, -20 V. RDS(ON)  = 0.014 @ VGS  = -4.5 V
 
                    RDS(ON)   = 0.020 @ VGS  = -2.5 V
Extended VGSS   range (±12V) for battery applications.
Low gate charge (44nC typical).
Fast switching speed. 
High performance trench technology for extremely low RDS(ON) .
High power and current handling capability.

 




Application

Load switch
Battery protection
Power management



Pinout

  Connection Diagram


Specifications

Symbol                               Parameter Ratings Units
VDSS
Drain-Source Voltage -00 V
VGSS
Gate-Source Voltage ±12 V
ID
Drain Current - Continuou (Note 1a)
                      - Pulse
-11 A
      -50
PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
2.5 W
       1.2
       1
TJ ,TSTG
 
Operating and Storage Junction Temperature Range -55 to +150



Description

This FDS6576 P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductors advance PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).




Parameters:

Technical/Catalog InformationFDS6576
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs14 mOhm @ 11A, 4.5V
Input Capacitance (Ciss) @ Vds 4044pF @ 10V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs60nC @ 4.5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6576
FDS6576



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