MOSFET SO-8
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | - 6.3 A | ||
| Resistance Drain-Source RDS (on) : | 0.032 Ohms | Configuration : | Single Quad Drain Triple Source | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 Narrow | Packaging : | Reel |

| Symbol | Parameter | Ratings | Units |
| VDSS |
Drain-Source Voltage | -30 | V |
| VGSS |
Gate-Source Voltage | ±20 | V |
| ID |
Drain Current - Continuou (Note 1a) - Pulse |
-6.3 | A |
| -40 | |||
| PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 | W |
| 1.2 | |||
| 1.0 | |||
| TJ ,TSTG |
Operating and Storage Junction Temperature Range | -55 to +150 |
This FDS6609A P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices FDS6609A are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
| Technical/Catalog Information | FDS6609A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 6.3A |
| Rds On (Max) @ Id, Vgs | 32 mOhm @ 7A, 10V |
| Input Capacitance (Ciss) @ Vds | 930pF @ 15V |
| Power - Max | 1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 29nC @ 10V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS6609A FDS6609A |