FDS6609A

MOSFET SO-8

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FDS6609A Picture
SeekIC No. : 00163797 Detail

FDS6609A: MOSFET SO-8

floor Price/Ceiling Price

Part Number:
FDS6609A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : - 6.3 A
Resistance Drain-Source RDS (on) : 0.032 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.032 Ohms
Continuous Drain Current : - 6.3 A


Features:

-6.3 A, -30 V. RDS(ON)=  0.032 W @ VGS  = -10 V

                          RDS(ON)  = 0.05 W @ VGS  = -4.5 V
Low gate charge 
Fast switching speed 
High performance trench technology for extremely low RDS(ON)
High power and current handling capability



Application

DC/DC converter
Load switch
Motor Drive



Pinout

  Connection Diagram


Specifications

Symbol                       Parameter Ratings Units
VDSS
Drain-Source Voltage -30 V
VGSS
Gate-Source Voltage ±20 V
ID
Drain Current - Continuou (Note 1a)
                      - Pulse
-6.3 A
      -40
PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
2.5 W
      1.2
      1.0
T ,TSTG
Operating and Storage Junction Temperature Range -55 to +150



Description

This FDS6609A P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices FDS6609A are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationFDS6609A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6.3A
Rds On (Max) @ Id, Vgs32 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 930pF @ 15V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs29nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6609A
FDS6609A



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