FDS6630A

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 0.038 Ohms


Features:

• 6.5 A, 30 V. R _DS(on)= 0.038 Ω @ V_GS = 10 V
                      R _DS(on)= 0.053 Ω @ V_GS = 4.5 V
• Low gate charge (5nC typical).
• Fast switching speed.
•  High performance trench technology for extremely Low R_DS(ON)
• High power and current handling capability.


Application

• DC/DC converter
• Load switch
• Motor drives


Pinout




Specifications

Symbol	Parameter	FDS8433A	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	6.5	A
		40
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDS6630A N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These FDS6630A devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDS6630A
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6.5A
Rds On (Max) @ Id, Vgs	38 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds	460pF @ 15V
Power - Max	1W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	7nC @ 5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6630A FDS6630A FDS6630ADKR ND FDS6630ADKRND FDS6630ADKR