FDS6670AS

MOSFET 30V N-CH POWER TRENCH SYNCFET

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SeekIC No. : 00147683 Detail

FDS6670AS: MOSFET 30V N-CH POWER TRENCH SYNCFET

floor Price/Ceiling Price

US $ .41~.61 / Piece | Get Latest Price
Part Number:
FDS6670AS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.61
  • $.54
  • $.47
  • $.41
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 13.5 A
Resistance Drain-Source RDS (on) : 0.009 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 13.5 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.009 Ohms


Features:

• 13.5 A, 30 V. RDS(ON) max= 9.0 mΩ @ VGS = 10 V
                        RDS(ON) max= 11.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (27nC typical)
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability



Application

• DC/DC converter
• Low side notebook



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS


Drain-Source Voltage

30

V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a)
                        Pulsed
13.5
A
50

PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
2.5
W
1.2
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C



Description

The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.


Parameters:

Technical/Catalog InformationFDS6670AS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C13.5A
Rds On (Max) @ Id, Vgs9 mOhm @ 13.5A, 10V
Input Capacitance (Ciss) @ Vds 1540pF @ 15V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs38nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6670AS
FDS6670AS



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