FDS6670S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 13.5 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.009 Ohms


Features:

·  13.5 A, 30 V. R_DS(ON) = 9 mW @ V_GS = 10 V
                          R_DS(ON) = 12.5 mW @ V_GS = 4.5 V
·  Includes SyncFET Schottky body diode
·  Low gate charge (24nC typical)
·  High performance trench technology for extremely low R_DS(ON) and fast switching
·  High power and current handling capability


Application

·  DC/DC converter
·  Motor drives


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 1a)                        Pulsed	13.5	A
		50
PD	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)                                                               (Note 1c)	2.5	W
		1.2
		1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

The FDS6670S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R_DS(ON) and low gate charge. The FDS6670S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.