FDS6675

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.014 Ohms
Continuous Drain Current : - 11 A


Features:

-11 A, -30 V. R_DS(ON) = 0.014 W @ V_GS = -10 V,             
                    R_DS(ON)= 0.020 W @ V_GS = -4.5 V.
Low gate charge (30nC typical).
High performance trench technology for extremely low R_DS(ON)
High power and current handling capability.


Pinout




Specifications

Symbol	Parameter	FDS8433A	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-11	A
		-50
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDS6675 P-Channel   Logic   Level  MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDS6675 are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Parameters:

Technical/Catalog Information	FDS6675
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	14 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	3000pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	42nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6675 FDS6675 FDS6675TR ND FDS6675TRND FDS6675TR