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MFG:FSC Package Cooled:SOP
Part Number: FDS6675
MFG: FSC
Package Cooled: SOP
Description: This P-Channel Logic Level MOSFET is produced using Fairchild Semi...
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FDS6675
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DataSheet
General Description
FDS6675 General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
FDS6675 Maximum Ratings
| Symbol | Parameter | FDS8433A | Units |
| VDSS | Drain-Source Voltage | -30 | V |
| VGSS | Gate-Source Voltage | ±8 | V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
-11 | A |
| -50 | |||
| PD | Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 | W |
| 1.2 | |||
| 1 | |||
| TJ, Tstg | Operating and Storage Junction Temperature Range | -55 to +150 | °C |
FDS6675 Features
-11 A, -30 V. RDS(ON) = 0.014 W @ VGS = -10 V,
RDS(ON)= 0.020 W @ VGS = -4.5 V.
Low gate charge (30nC typical).
High performance trench technology for extremely low RDS(ON)
High power and current handling capability.
RDS(ON)= 0.020 W @ VGS = -4.5 V.
Low gate charge (30nC typical).
High performance trench technology for extremely low RDS(ON)
High power and current handling capability.
FDS6675 Connection Diagram
FDS6675
PDF/DataSheet Download
- Datasheet: FDS6675
- File Size: 118453 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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