FDS6680A

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.0095 Ohms
Continuous Drain Current : 12.5 A


Features:

•  12.5 A, 30 V  RDS(ON)  = 9.5 mΩ @ VGS = 10 V
                         RDS(ON)  = 13 mΩ @ VGS = 4.5 V
•  Ultra-low gate charge 
•  High performance trench technology for extremely low RDS(ON) 
•  High power and current handling capability


Pinout




Specifications

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Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	11.5	A
		50
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1.0
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDS6680A N-Channel Logic Level MOSFET is produced  using Fairchild Semiconductor's advanced Power  Trench process that has been especially tailored to  minimize the on-state resistance and yet maintain  superior switching performance.

These devices FDS6680A are well suited for low voltage and battery powered applications where low in-line power  loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDS6680A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12.5A
Rds On (Max) @ Id, Vgs	9.5 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds	1620pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	23nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6680A FDS6680A FDS6680ATR ND FDS6680ATRND FDS6680ATR