FDS6680AS

MOSFET 30V N-Channel PowerTrench SyncFET

product image

FDS6680AS Picture
SeekIC No. : 00146743 Detail

FDS6680AS: MOSFET 30V N-Channel PowerTrench SyncFET

floor Price/Ceiling Price

US $ .35~.52 / Piece | Get Latest Price
Part Number:
FDS6680AS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.52
  • $.46
  • $.4
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11.5 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 11.5 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:

• 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V
                        RDS(ON) max= 12.5 m @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (22nC typical)
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability



Application

• DC/DC converter
• Low side notebooks



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Draint Current - Continuous (Note 1)
11.5
A
- Pulsed
50
PD
Power Dissipation for Single Operation (Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C



Description

The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low  RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.




Parameters:

Technical/Catalog InformationFDS6680AS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C11.5A
Rds On (Max) @ Id, Vgs10 mOhm @ 11.5A, 10V
Input Capacitance (Ciss) @ Vds 1240pF @ 15V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6680AS
FDS6680AS



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
RF and RFID
Integrated Circuits (ICs)
Crystals and Oscillators
Potentiometers, Variable Resistors
Semiconductor Modules
Industrial Controls, Meters
View more