FDS6680S

MOSFET SO-8 SGL N-CH 30V

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SeekIC No. : 00162393 Detail

FDS6680S: MOSFET SO-8 SGL N-CH 30V

floor Price/Ceiling Price

Part Number:
FDS6680S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11.5 A
Resistance Drain-Source RDS (on) : 0.011 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 11.5 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.011 Ohms


Features:

• 11.5 A, 30 V. RDS(ON) = 0.011 @ VGS = 10 V
                        RDS(ON) = 0.016 @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (17nC typical)
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability



Application

• DC/DC converter
• Motor drives



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
+20
V
ID
Draint Current - Continuous (Note 1)
11.5
A
- Pulsed
50
PD
Power Dissipation for Single Operation (Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C



Description

The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDS6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.




Parameters:

Technical/Catalog InformationFDS6680S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C11.5A
Rds On (Max) @ Id, Vgs11 mOhm @ 11.5A, 10V
Input Capacitance (Ciss) @ Vds 2010pF @ 15V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs24nC @ 5V
Package / CaseSO-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6680S
FDS6680S



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