FDS6685

MOSFET SO-8 SGL P-CH -30V

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SeekIC No. : 00161339 Detail

FDS6685: MOSFET SO-8 SGL P-CH -30V

floor Price/Ceiling Price

Part Number:
FDS6685
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/29

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : - 8.8 A
Resistance Drain-Source RDS (on) : 0.02 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : - 8.8 A
Resistance Drain-Source RDS (on) : 0.02 Ohms


Features:

•  -8.8 A, -30 V. RDS(ON) = 0.020 Ω @ VGS = -10 V
                         RDS(ON) = 0.035 Ω @ VGS = -4.5 V
• Extended VGSS range (±25V) for battery applications.
• Low gate charge (19nC typical).
• Fast switching speed.
•  High performance trench technology for extremely low RDS(ON)
• High power and current handling capability.



Application

• Battery protection
• Load switch
• Motor drives



Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ±25 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
-8.8 A
-50
PD Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5 W
1.2
1
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C



Description

This FDS6685 P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices FDS6685 are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationFDS6685
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C8.8A
Rds On (Max) @ Id, Vgs20 mOhm @ 8.8A, 10V
Input Capacitance (Ciss) @ Vds 1604pF @ 15V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs24nC @ 5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6685
FDS6685



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