FDS6688

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 16 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.0045 Ohms


Features:

• 16 A, 30 V. R_DS(ON) = 6 mΩ @ V_GS = 10 V
                     R_DS(ON) = 7 mΩ @ V_GS = 4.5 V
• Ultra-low gate charge (40 nC typical)
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability


Application

• DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±16	V
ID	Drain Current Continuous (Note 1a)                       Pulsed	16	A
		50
PD	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)                                                               (Note 1c)	2.5	W
		1.4
		1.2
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDS6688 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low R_DS(ON) in a small package.


Parameters:

Technical/Catalog Information	FDS6688
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	6 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	3888pF @ 15V
Power - Max	1.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	56nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6688 FDS6688