FDS6690S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 10 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.016 Ohms


Features:

· 10 A, 30 V. RDS(ON) = 0.016 W @ VGS = 10 V
                      RDS(ON) = 0.024 W @ VGS = 4.5 V
· Includes SyncFET Schottky diode
· Low gate charge (11 nC typical)
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability


Application

· DC/DC converter
· Motor drives


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	+20	V
ID	Draint Current - Continuous (Note 1)	10	A
	- Pulsed	50
PD	Power Dissipation for Single Operation (Note 1a)	2.5	W
	(Note 1b)	1.2
	(Note 1c)	1
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

The FDS6690S is designed to replace a single SO-8 OSFET and Schottky diode in synchronous DC:DC ower supplies. This 30V MOSFET is designed to aximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDS6690S as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.